THE USE OF PARASITIC NONLINEAR CAPACITORS IN CLASS-E AMPLIFIERS

被引:98
作者
CHUDOBIAK, MJ
机构
[1] Avtech Electrosystems Ltd., Ogdensburg
来源
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1994年 / 41卷 / 12期
关键词
D O I
10.1109/81.340867
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The most common class E amplifier configuration uses a single transistor with a shunt capacitor and a series resonant output filter. Until now a linear shunt capacitance has been assumed. However, to achieve operation at 900 MHz and above, it is of interest to rely solely upon the nonlinear parasitic collector-substrate capacitance of the transistor. An analytical theory for operation at 50% duty cycle and nonlinear capacitance is presented in this correspondence, and the effects on the power capability of the amplifier are discussed.
引用
收藏
页码:941 / 944
页数:4
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