PHOTO-EFFECTS IN ISOTYPE HETEROJUNCTIONS

[1] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[2] ALLOYED SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICA STATUS SOLIDI, 1966, 16 (02): : 351 - &

[3] PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 174 - &

[4] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[5] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138

[6] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[7] OLDHAM WG, 1963, THESIS CARNEGIE I

[8] DETERMINATION OF OPTICAL ABSORPTION USING HETEROCRYSTALS [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : K79 - &

[9] PHOTO-EMISSION FROM SEMICONDUCTOR SURFACES [J]. PHYSICS LETTERS, 1963, 3 (05): : 246 - 247

[10] TANSLEY TL, TO BE PUBLISHED

[1] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[2] ALLOYED SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICA STATUS SOLIDI, 1966, 16 (02): : 351 - &

[3] PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 174 - &

[4] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[5] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138

[6] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[7] OLDHAM WG, 1963, THESIS CARNEGIE I

[8] DETERMINATION OF OPTICAL ABSORPTION USING HETEROCRYSTALS [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : K79 - &

[9] PHOTO-EMISSION FROM SEMICONDUCTOR SURFACES [J]. PHYSICS LETTERS, 1963, 3 (05): : 246 - 247

[10] TANSLEY TL, TO BE PUBLISHED