MEMORY SWITCHING IN GEO2 FILMS

被引：8

作者：

KHAN, MI

HOGARTH, CA

KHAN, MN

机构：

[1] Department of Physics, Brunel University, Uxbridge

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 46卷 / 02期

关键词：

D O I：

10.1080/00207217908900988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A range of specimens in the form of thin film sandwishof AI-GeO2-AI(dielectric thickness 400–1500 Å) and Cu-Geo2-Cu (dielectric thickness 2000 Å) is shown to exhibit memory switching at an applied voltage of order IIV. © Taylor and Francis Group, LLC.

引用

页码：215 / 216

页数：2

共 4 条

[1] ELECTRICAL SWITCHING PHENOMENA IN TRANSITION METAL GLASSES UNDER INFLUENCE OF HIGH ELECTRIC FIELDS [J].