WET CHEMICAL ETCHING BEHAVIOR OF GA(AL)AS AND IN(GA)P(AS) LAYERS

被引：10

作者：

FRANZ, G

HOYLER, C

SACHER, D

机构：

[1] Siemens Research Laboratories, Munich, 83, Otto-Ffahn-Ring 6

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 11A期

关键词：

III/V-SEMICONDUCTORS; WET ETCHING; V-GROOVES;

D O I：

10.1143/JJAP.30.2693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical etching behavior of Ga(Al)As and In(Ga)P(As) containing sandwich layers grown by metalorganic vapor phase epitaxy has been investigated using various etching solutions. The chemical background is described by a potential-pH diagram. Activation energies obtained were between 0.28 and 0.46 eV. The inclination angle of the etched walls is mainly 55-degrees. In both the systems, a transition from a reaction-rate limited process to a diffusion-rate-limited one is observed. In InP, a reactive intermediate with an inclination angle of 45-degrees could be trapped.

引用

页码：2693 / 2699

页数：7

共 27 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)INP [J].