THE INFLUENCE OF THERMAL ANNEALING ON THE STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF TIO2-X THIN-FILMS

被引：94

作者：

RADECKA, M ^{[1
]}

ZAKRZEWSKA, K ^{[1
]}

CZTERNASTEK, H ^{[1
]}

STAPINSKI, T ^{[1
]}

DEBRUS, S ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75252 PARIS 05,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90663-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous thin films of TiO2-x with a departure from stoichiometry x in the range from 0.08 to -0.2 were deposited by plasma-emission-controlled DC magnetron and conventional RF reactive sputtering. The influence of the post-deposition annealing at 573-1373 K on the structural, electrical and optical properties was studied. It was established that substoichiometric films with x = 0.08 when subjected to the annealing changed their overall spectral characteristics while in the case of overoxidized samples (x = - 0.2) the transmission spectra were strongly modified in the region of the absorption edge (3.0-3.7 eV). It was found that the refractive index of TiO2-x films increased with annealing temperature up to a saturation level of about 2.39. The analysis of the absorption data revealed that direct allowed transitions at the energy of 3.44-3.51 eV prevailed in rutile samples.

引用

页码：227 / 234

页数：8

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