ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE

被引：26

作者：

BYER, NE

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来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 04期

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D O I：

10.1063/1.1659078

中图分类号：

O59 [应用物理学];

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页码：1597 / &

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[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
DUNSE, JU
NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
[3] KRESSEL H, PRIVATE COMMUNICATIO
[4] DOUBLE INJECTION IN INSULATORS
LAMPERT, MA
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &
[5] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS
MORIIZUMI, T
TAKAHASHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) : 348 - +
[6] NELSON HF, TO BE PUBLISHED
[7] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K
RUPPRECHT, H
WOODALL, JM
KONNERTH, K
PETTIT, DG
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +
[8] ELECTROLUMINESCENT GALLIUM ARSENIDE DIODES WITH NEGATIVE RESISTANCE
WEISER, K
LEVITT, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2431 - &