SWITCHING BEHAVIOR OF OVER-CRITICALLY DOPED GUNN DIODES

被引：21

作者：

GUERET, P

REISER, M

机构：

来源：

关键词：

D O I：

10.1063/1.1654045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：60 / &

共 6 条

GUERET, P .

[2]

MAGARSCHACK J, 1970, DIGEST TECHNICAL PAP, V13, P194

[3]

MAGARSCHACK J, 1970, 8 P INT C MICR OPT G

[4]

MIRCEA A, 1969, P DEVICE RESEARCH C

[5] STABILITY AND SWITCHING IN OVERCRITICALLY DOPED GUNN DIODES [J].

THIM, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1285-+

[6]

THIM HW, 1971, ELECTRON LETTERS, V7, P247