MEASUREMENT AND SIMULATION OF FLOATING SUBSTRATE EFFECTS ON THE INTRINSIC GATE CAPACITANCE CHARACTERISTICS OF SOI N-MOSFETS

被引：4

作者：

FLANDRE, D

机构：

[1] Laboratoire de Microélectronique, Université Catholiquede Louvain, B-1348 Louvain-la-Neuve

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 10期

关键词：

MOSFETS; SIMULATION; SUBSTRATES; MEASUREMENT;

D O I：

10.1049/el:19920614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics in saturation of SOI n-MOSFETs, is clearly established using original two-dimensional numerical device simulations.

引用

页码：967 / 969

页数：3

共 6 条

[1] COLINGE JP, 1991, SILICON INSULATOR TE
[2] FLANDRE D, 1990, 20TH P EUR SOL STAT, P437
[3] CMOS devices and circuits made in lamp-ZMR SOI films
Haond, M.
Dutartre, D.
Bensahel, D.
Monroy-Aguirre, A.
Thouret, S.
Chapuis, D.
[J]. Microelectronic Engineering, 1988, 8 (3-4) : 201 - 218
[4] TECHNIQUES FOR SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-DEVICES
LAUX, SE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2028 - 2037
[5] TSIVIDIS YP, 1987, OPERATION MODELING M, pCH8
[6] 1991, TIMA PISCES 2B 2 DIM

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