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INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS
被引:9
作者
:
HE, YL
论文数:
0
引用数:
0
h-index:
0
HE, YL
LIU, HN
论文数:
0
引用数:
0
h-index:
0
LIU, HN
机构
:
来源
:
JOURNAL DE PHYSIQUE
|
1981年
/ 42卷
/ NC4期
关键词
:
D O I
:
10.1051/jphyscol:19814183
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
页码:831 / 834
页数:4
相关论文
共 4 条
[1]
ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
HIROSE, M
TANIGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
TANIGUCHI, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
OSAKA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 377
-
382
[2]
Mott N F, 1979, ELECT PROCESSES NONC, P219
[3]
OSAKA Y, 1978, JAP J APPL PHYS, V17, P985
[4]
ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
SETO, JYW
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
SETO, JYW
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5247
-
5254
←
1
→
共 4 条
[1]
ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
HIROSE, M
TANIGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
TANIGUCHI, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Hiroshima University
OSAKA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 377
-
382
[2]
Mott N F, 1979, ELECT PROCESSES NONC, P219
[3]
OSAKA Y, 1978, JAP J APPL PHYS, V17, P985
[4]
ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
SETO, JYW
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
SETO, JYW
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5247
-
5254
←
1
→