EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE

被引：4

作者：

BSIESY, A

HORY, MA

GASPARD, F

HERINO, R

LIGEON, M

MULLER, F

ROMESTAIN, R

VIAL, JC

机构：

[1] Laboratoire de Spectrométrie Physique (U.R.A. C.N.R.S 08), Université Joseph Fourier de Grenoble I, 38402 Saint Martin d'Heres Cedex

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00051-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous silicon luminescence can be strongly modified by the application of an external bias (energy-selective quenching of the photoluminescence, reversible voltage tuning of the cathodic electroluminescence), as the result of selective carrier injection into the silicon nanocrystallites of the porous layer. Partial oxidation of the material is shown to strongly modify this selectivity and the voltage dependence of the light emission by changing the voltage drop distribution in the material.

引用

页码：233 / 236

页数：4