METHOD FOR STUDYING INTERFACE STATES IN MIS STRUCTURES BY THERMALLY STIMULATED SURFACE-POTENTIAL

被引：6

作者：

YAMASHITA, K

IWAMOTO, M

HINO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2866 / 2875

页数：10

共 22 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[3] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[4] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J].

GOETZBERGER, A ;

NICOLLIA.FH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4582-+

[5] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[6] THEORY AND APPLICATION OF THERMALLY STIMULATED CURRENTS IN PHOTOCONDUCTORS [J].

HAERING, RR ;

ADAMS, EN .

PHYSICAL REVIEW, 1960, 117 (02) :451-454

[7] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+

[8] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[9] SURFACE-STATE DENSITY AND SURFACE POTENTIAL IN MIS CAPACITORS BY SURFACE PHOTOVOLTAGE MEASUREMENTS .2. [J].

LAM, YW ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (09) :1376-+

[10]

LAM YW, 1971, J PHYS D APPL PHYS, V4, P1370, DOI 10.1088/0022-3727/4/9/318

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