PROXIMITY CORRECTION FOR ELECTRON-BEAM PATTERNING ON X-RAY MASK BLANKS

被引:10
作者
REIMER, K
PONGRATZ, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584498
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1603 / 1606
页数:4
相关论文
共 5 条
[1]  
ADESIDA I, 1979, J APPL PHYS, V50, P4371
[2]  
HEUBERGER A, 1986, P ME C, P3
[3]   BEAM ENERGY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY - THE RANGE AND INTENSITY OF BACKSCATTERED EXPOSURE [J].
JACKEL, LD ;
HOWARD, RE ;
MANKIEWICH, PM ;
CRAIGHEAD, HG ;
EPWORTH, RW .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :698-700
[4]   ENERGY DEPOSITION FUNCTIONS IN ELECTRON RESIST FILMS ON SUBSTRATES [J].
PARIKH, M ;
KYSER, DF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1104-1111
[5]  
PONGRATZ S, 1987, P MICROCIRCUIT ENG C, P123