PARALLEL SILICIDE CONTACTS

被引:189
作者
OHDOMARI, I [1 ]
TU, KN [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.328160
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3735 / 3739
页数:5
相关论文
共 5 条
[1]  
ANDREWS JM, 1974, J VAC SCI TECHNOL, V11, P935
[2]   MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON [J].
OHDOMARI, I ;
KUAN, TS ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7020-7029
[3]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[4]  
ROSENBERG R, 1978, THIN FILMS INTERDIFF
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO