Superconducting Properties of V3Si Produced by Reactive Diffusion

被引：7

作者：

Cadieu, F. J. ^{[1
]}

Johnson, G. R. ^{[1
]}

Douglass, D. H. ^{[1
]}

机构：

[1] Univ Rochester, Dept Phys & Astron, Rochester, NY USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1972年 / 6卷 / 5-6期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1007/BF00644084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have made a study of the superconducting properties of specially prepared V3Si films. The films studied were produced in two steps. Vanadium was first sputtered onto silica glass substrates; then the film and substrate were heated. Above a definite threshold temperature the vanadium combined with the silicon atoms in the glass to form V3Si.

引用

页码：529 / 531

页数：3

共 6 条

[1]

Babiskin I., 1964, Z PHYS, V180, P483

[2]

Efimov Yu. V., 1970, Physics and metallurgy of superconductors, P141

[3] ZUR SUPRALEITUNG VON V-SI-DIFFUSIONSSCHICHTEN UND V-GA-DIFFUSIONSSCHICHTEN SOWIE VON V3SI-KERNDRAHTEN UND V3GA-KERNDRAHTEN [J].

KOCH, D ;

OTTO, G ;

SAUR, E .

PHYSICS LETTERS, 1963, 4 (05) :292-293

[4]

MULLER C, 1964, Z NATURFORSCH PT A, VA 19, P539

[5] MECHANISM AND KINETICS OF GROWTH OF SUPERCONDUCTING COMPOUND NB3SN [J].

OLD, CF ;

MACPHAIL, I .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :202-&

[6]

Polak M., 1969, J PHYS B ATOM MOL PH, VB19, P1359

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