CHARACTERISTICS OF 5-EV ABSORPTION-BAND IN SPUTTER-DEPOSITED GEO2-SIO2 THIN GLASS-FILMS

被引：35

作者：

NISHII, J ^{[1
]}

YAMANAKA, H ^{[1
]}

HOSONO, H ^{[1
]}

KAWAZOE, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films (4.6 mum thick) of 5 GeO2-95 SiO2 and 55 GeO2-45 SiO2 (Mol %) glasses were prepared by rf sputtering method in an Ar-O2 atmosphere. An intense absorption band at around 5 eV was distinctly observed in both films after the as-deposited films were annealed at 350-degrees-C for 30 min in a vacuum. A part of this 5-eV band was gradually decreased by UV irradiation. Saturated absorptivity changes (-DELTAalpha(infinity)) of the UV bleached component, which is considered to be the origin of Hill gratings [K. O. Hill, Y. Fujii, and B. S. Kawasaki, Appl. Phys. Lett. 32, 647 (1978)] and second-harmonic generation in SiO2 glass fibers doped with GeO2, after a prolonged irradiation were 50 cm-1 for 5 GeO2-95 SiO2 films and 400 cm-1 for 55 GeO2-45 SiO2 films. These values are greater by one or two orders of magnitude than those (approximately 2 cm-1) of bulk germanosilicate glasses prepared by the vapor axial deposition method.

引用

页码：282 / 284

页数：3

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