RADIATION HARDNESS OF OVONIC DEVICES

被引:38
作者
OVSHINSKY, SR
EVANS, EJ
NELSON, DL
FRITZSCHE, H
机构
[1] Energy Conversion Devices, Inc., Troy, Michigan
关键词
D O I
10.1109/TNS.1968.4325062
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ovonic threshold switches have been exposed to pulses of flash X-rays to levels of 1.8xlOll rads/sec and to fast neutron fluences of as high as nvt = 1.2x1017 n/cm2. The switching devices have continued to function during the transient of the X-ray flash and experienced no permanent damage or change of their electrical parameters in excess of the resolution of the experimental testing procedure which was about ±100o/o in the case of the neutron exposure. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:311 / +
页数:1
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