DRY ETCHING INDUCED DAMAGE ON VERTICAL SIDEWALLS OF GAAS CHANNELS

被引：57

作者：

PANG, SW

GOODHUE, WD

LYSZCZARZ, TM

EHRLICH, DJ

GOODMAN, RB

JOHNSON, GD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1916 / 1920

页数：5

共 17 条

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[2] MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS [J].

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[3]

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[6]

GOODHUE WD, 1987, P C GAAS RELATED COM, P349

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APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045

[8] RAMAN-SCATTERING STUDY OF PLASMA-ETCHING DAMAGE IN GAAS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1316-1318

[9] DOT LITHOGRAPHY FOR ZERO-DIMENSIONAL QUANTUM-WELLS USING FOCUSED ION-BEAMS [J].

KUBENA, RL ;

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WARD, JW ;

GARVIN, HL ;

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BRAULT, RG .

APPLIED PHYSICS LETTERS, 1987, 50 (22) :1589-1591

[10] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS [J].

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NAKAJIMA, O ;

ISHIBASHI, T .

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