SIMPLE MODEL FOR SEMICONDUCTOR-METAL TRANSITIONS - SMB6 AND TRANSITION-METAL OXIDES

被引:878
作者
FALICOV, LM
KIMBALL, JC
机构
[1] Department of Physics, The James Franck Institute, Chicago
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.22.997
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose a simple model for a semiconductor-metal transition, based on the existence of both localized (ionic) and band (Bloch) states. It differs from other theories in that we assume the one-electron states to be essentially unchanged by the transition. The electron-hole interaction is responsible for the anomalous temperature dependence of the number of conduction electrons. For interactions larger than a critical value, a first-order semiconductor-metal phase transition takes place. © 1969 The American Physical Society.
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页码:997 / &
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