HIGH-EFFICIENCY GAALAS DOUBLE-HETEROSTRUCTURE PHOTO-VOLTAIC DETECTOR

被引：17

作者：

MILLER, RC

SCHWARTZ, B

KOSZI, LA

WAGNER, WR

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.90515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：721 / 723

页数：3

共 12 条

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[3]

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[5] ORIGIN OF N-CONGRUENT-+0-2 INJECTION CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].

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LOGAN, RA ;

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APPLIED PHYSICS LETTERS, 1977, 31 (07) :454-456

[6] INTEGRATED MULTI-JUNCTION GAAS PHOTODETECTOR WITH HIGH OUTPUT VOLTAGE [J].

ILEGEMS, M ;

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KOSZI, LA ;

MILLER, RC .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :629-631

[7] STEADY-STATE JUNCTION-CURRENT DISTRIBUTIONS IN THIN RESISTIVE FILMS ON SEMICONDUCTOR JUNCTIONS (SOLUTIONS OF DEL 2V = +/- EV) [J].

JOYCE, WB ;

WEMPLE, SH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3818-&

[8] GAAS DOUBLE-HETEROSTRUCTURE PHOTODETECTORS [J].

MERZ, JL ;

LOGAN, RA ;

MCBRIDE, PL ;

SERGENT, AM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3580-3587

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

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[10]

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