LO PHONON RAMAN LINESHAPE IN HIGHLY EXCITED GAAS

被引：14

作者：

TURTELLI, RS

DECASTRO, ARB

机构：

[1] Instituto de Fisica “Gleb Wataghin”, Universidade Estadual de Campinas

[2] Department of Physics, University of California, Berkeley, California

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssb.2220930241

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the LO phonon Raman line in bulk GaAs excited with pulsed IR radiation of high intensity is shifted, broadened, and distorted. The TO line is not affected. These phenomena cannot be explained by trivial lattice heating but are quantitatively accounted for by invoking mixing of the LO phonons with photo‐excited carrier collective modes. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：811 / 815

页数：5

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