FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION

被引:9
作者
VANHELLEMONT, J [1 ]
TRAUWAERT, MA [1 ]
POORTMANS, J [1 ]
CAYMAX, M [1 ]
CLAUWS, P [1 ]
机构
[1] STATE UNIV GHENT,B-9000 GHENT,BELGIUM
关键词
D O I
10.1063/1.108970
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fast degradation is reported of p+ boron-doped Si(1-x)Gex strained layers by I-MeV electron irradiations performed at room temperature. n+p+ diodes with x=0, 0.12, and 0.16 are fabricated on conventional p-type Czochralski silicon substrates. Current/voltage, capacitance/voltage, and capacitance/temperature characteristics are studied before and after irradiation as a function of the electron fluence. A possible degradation mechanism is discussed.
引用
收藏
页码:309 / 311
页数:3
相关论文
共 7 条
[1]  
CAYMAX M, 1990, 2ND P INT C EL MAT, P519
[2]  
DREVINSKY PJ, 1988, MATER RES SOC S P, V104, P167
[3]   STRUCTURE, PROPERTIES AND APPLICATIONS OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES [J].
JAIN, SC ;
HAYES, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) :547-576
[4]  
KASPER E, 1991, SEMICONDUCT SEMIMET, V33, P223
[5]  
Kimerling L. C., 1989, Materials Science Forum, V38-41, P141, DOI 10.4028/www.scientific.net/MSF.38-41.141
[6]  
POORTMANS, 1992, MICROELECTRON ENG, V19, P443
[7]  
VANHELLEMONT J, IN PRESS THIN SOLID