GROWTH AND ELECTRICAL TRANSPORT-PROPERTIES OF IN2TE3 THIN-FILMS

被引：23

作者：

MATHUR, PC

KUMAR, A

TANEJA, OP

DAWAR, AL

机构：

[1] ARSD COLL,NEW DELHI 110021,INDIA

[2] GOVT COLL,GURGAON 122001,INDIA

[3] DEF SCI LAB,DELHI 110054,INDIA

来源：

关键词：

D O I：

10.1016/0040-6090(81)90041-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：377 / 383

页数：7

共 19 条

APPEL, J .

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1954, 9 (03) :265-267

[2]

BARUA KC, 1970, INDIAN J PURE AP PHY, V8, P258

[3] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[4]

EVANS BL, 1977, PHYSICS CHEM MATERIA, V4

[5]

FISHER IZ, 1960, SOV PHYS SOLID STATE, V1, P171

[6]

Hahn H., 1949, Zeitschrift fur anorganische Chemie, V260, P97, DOI DOI 10.1002/ZAAC.19492600108

[7]

Inuzuka H., 1954, Proc. Jpn. Acad, V30, P383, DOI [10.2183/pjab1945.30.383, DOI 10.2183/PJAB1945.30.383]

LUE, JT .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (02) :161-163

[9]

PUTLEY EH, 1960, HALL COEFFICIENT REL

[10]

Romeo N., 1973, Rivista del Nuovo Cimento, V3, P103, DOI 10.1007/BF02788093