HIGH-VOLTAGE PLANAR JUNCTION WITH A FIELD-LIMITING RING

被引:21
作者
YASUDA, S
YONEZAWA, T
机构
关键词
D O I
10.1016/0038-1101(82)90128-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:423 / 427
页数:5
相关论文
共 6 条
[1]  
ADLER MS, 1973, IEDM TECHNICAL DIGES, P105
[2]  
ADLER MS, 1977, IEEE T ELECTRON DEV, V24, P167
[3]   HIGH-VOLTAGE PLANAR P-N JUNCTIONS [J].
KAO, YC ;
WOLLEY, ED .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1409-+
[4]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P114
[6]   TWO-DIMENSIONAL FIELD DISTRIBUTION ANALYSIS OF REVERSE BIASED P-N-JUNCTION DEVICES [J].
YASUDA, S ;
KURATA, M .
SOLID-STATE ELECTRONICS, 1980, 23 (10) :1077-1084