GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .3. REEVAPORATION OF CD AND TE FROM CDTE(111) SURFACES AND THICK ELEMENTAL DEPOSITS MONITORED BY QUADRUPOLE-MASS SPECTROMETRY

被引:13
作者
HERMAN, MA [1 ]
JUZA, P [1 ]
FASCHINGER, W [1 ]
SITTER, H [1 ]
机构
[1] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA
关键词
D O I
10.1002/crat.2170230304
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:307 / 317
页数:11
相关论文
共 23 条
[1]   TRANSITION LAYER IN LATTICE-GAS MODEL OF A SOLID-MELT INTERFACE [J].
CAHN, JW ;
KIKUCHI, R .
PHYSICAL REVIEW B, 1985, 31 (07) :4300-4304
[2]   EPITAXY AND THICK-FILM FORMATION ON AN ATTRACTIVE SUBSTRATE - THE SYSTEMATICS OF A LATTICE-GAS MODEL [J].
EBNER, C ;
ROTTMAN, C ;
WORTIS, M .
PHYSICAL REVIEW B, 1983, 28 (08) :4186-4197
[3]  
GMELIN L, 1983, HDB INORGANIC CHEM A, V2, P94
[4]   ATOMIC LAYER EPITAXY [J].
GOODMAN, CHL ;
PESSA, MV .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81
[5]   GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .1. RE-EVAPORATION OF CD AND TE FROM CDTE(111) SURFACES MONITORED BY AUGER-ELECTRON SPECTROSCOPY [J].
HERMAN, MA ;
JYLHA, O ;
PESSA, M .
CRYSTAL RESEARCH AND TECHNOLOGY, 1986, 21 (07) :841-851
[7]   SURFACE-MORPHOLOGY OF CDTE-FILMS GROWN ON CDTE (111) SUBSTRATES BY ATOMIC LAYER EPITAXY [J].
HERMAN, MA ;
VULLI, M ;
PESSA, M .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) :403-406
[8]   THE PROBLEM OF A NEAR-SURFACE QUASI-GAS TRANSITION LAYER IN MBE [J].
HERMAN, MA .
CRYSTAL RESEARCH AND TECHNOLOGY, 1986, 21 (11) :1413-1420
[9]   GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .2. A MODEL OF THE GROWTH-PROCESS OF CDTE ON CDTE(111) SUBSTRATES [J].
HERMAN, MA ;
JYLHA, O ;
PESSA, M .
CRYSTAL RESEARCH AND TECHNOLOGY, 1986, 21 (08) :969-974
[10]   ATOMIC LAYER EPITAXY OF CD1-XMNXTE GROWN ON CDTE (111)B SUBSTRATES [J].
HERMAN, MA ;
JYLHA, O ;
PESSA, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :480-483