INTERACTIONS BETWEEN CARRIERS AND LO PHONONS IN BULK P-GASB AND P-INSB - RAMAN INTERFERENCE LINESHAPES

被引：13

作者：

DORNHAUS, R ^{[1
]}

FARROW, RL ^{[1
]}

CHANG, RK ^{[1
]}

机构：

[1] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 02期

关键词：

D O I：

10.1016/0038-1098(80)90227-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：123 / 126

页数：4

共 17 条

[1]

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BUCHNER, S ;

BURSTEIN, E .

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[3]

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[4] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J].

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CARDONA, M .

PHYSICAL REVIEW B, 1978, 17 (04) :1623-1633

[5] CRYSTAL DYNAMICS OF LEAD TELLURIDE [J].

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ELCOMBE, MM .

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[6]

CORDEN P, 1970, 10TH P INT C PHYS SE, P739

[7]

Dornhaus R., 1979, Light scattering in solids, P299

[8] ORIENTATION-DEPENDENT RESONANT RAMAN-SCATTERING IN INSB AND GASB AT E1-E1+DELTA1 REGION [J].

DREYBRODT, W ;

RICHTER, W ;

CERDEIRA, F ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 60 (01) :145-156

[9]

Farrow R. L., 1979, Physics of Semiconductors 1978, P485

[10]

FARROW RL, 1978, SOLID STATE ELECTRON, V21, P1247

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