HOPPING TRANSPORT IN DELTA-DOPING LAYERS IN GAAS

被引：71

作者：

YE, QY ^{[1
]}

SHKLOVSKII, BI ^{[1
]}

ZRENNER, A ^{[1
]}

KOCH, F ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.41.8477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths. © 1990 The American Physical Society.

引用

页码：8477 / 8484

页数：8

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