ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS

被引：252

作者：

CHIANG, TC

KNAPP, JA

AONO, M

EASTMAN, DE

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.21.3513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3513 / 3522

页数：10

共 36 条

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[33] E VS K-] AND INVERSE LIFETIME OF CU(110) [J].

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[35] DIRECT-TRANSITION INTERPRETATION OF ANGULAR-DEPENDENT VALENCE-BAND PHOTOEMISSION FROM SINGLE-CRYSTAL COPPER IN ENERGY-RANGE 40LESS-THAN-OR-EQUAL-TOHVLESS-THAN-OR-EQUAL-TO200EV [J].

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HUSSAIN, Z ;

FADLEY, CS .

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[36] ELECTRON ESCAPE EFFECTS IN PHOTOEMISSION FROM AG(001) SURFACES [J].

WEEKS, SP ;

ROWE, JE .

SOLID STATE COMMUNICATIONS, 1978, 27 (09) :885-889

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