INSITU GROWTH OF EPITAXIAL TLBA2CACU2O7 THIN-FILMS

被引:28
作者
FACE, DW
NESTLERODE, JP
机构
[1] Du Pont Central Research and Development, Wilmington, DE 19880-0304
关键词
D O I
10.1063/1.108391
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial TlBa2CaCu2O7 thin films have been grown on single-crystal LaAlO3 and NdGaO3 substrates by in situ off-axis magnetron sputtering in the presence of Tl2O vapor. X-ray diffraction shows that the films are highly epitaxial with the c axis perpendicular to the substrate surface and [100] TlBa2CaCu2O7 aligned with pseudo-cubic [100] NdGaO3 and LaAlO3. The full width at half maximum of the rocking curve for the best films is 0.2-degrees. X-ray diffraction finite size effects show that the film surface is smooth to within several unit cells (approximately 40 angstrom). The films are superconducting as deposited with a T(c) (onset) of about 80 K and a T(c) (R = 0) of about 8 K. In situ oxygen treatment of the films at 675-degrees-C has produced films with a T(c) (R = 0) as high as 40 K. Ex situ annealing in O2 and Tl2O vapor at 800-degrees-C has produced films with a T(c) (R = 0) as high as 97 K while still retaining a very smooth surface.
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页码:1838 / 1840
页数:3
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