AEROSOL-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER - A LIQUID DELIVERY APPROACH TO METAL THIN-FILMS

被引：33

作者：

ROGER, C

CORBITT, TS

HAMPDENSMITH, MJ

KODAS, TT

机构：

[1] UNIV NEW MEXICO,DEPT CHEM,ALBUQUERQUE,NM 87131

[2] UNIV NEW MEXICO,DEPT CHEM ENGN,ALBUQUERQUE,NM 87131

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.112165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aerosol-assisted chemical vapor deposition has been used to attain high deposition rates (up to 800 angstrom min-1 at 140-degrees-C) of crystalline, low-resistivity (1.7-3.5 muOMEGA cm) Cu films at low temperatures (120-200-degrees-C) from toluene solutions of (hfac)Cu(1,5-COD), where 1,5-COD=1,5-cyclooctadiene, in a warm-wall reactor. Activation energies calculated from the deposition rate as a function of the preheating temperatures and the substrate temperature (varying also the nozzle-substrate distance) were 6.8, 8.9 (0.7 cm), and 9.1 (1.7 cm) kcal mol-1, respectively. The activation energy of 6.8 kcal mol-1 is similar to the enthalpy of vaporization of (hfac)Cu(1,5-COD).

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页码：1021 / 1023

页数：3

相关论文

共 15 条

[1] DOUBLE-LEVEL COPPER INTERCONNECTIONS USING SELECTIVE COPPER CVD [J].

AWAYA, N ;

ARITA, Y .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (10) :959-964

[2]

BERRY AD, 1990, J MATER RES, V5, P1109

[3] THE CHEMISTRY OF BETA-DIKETONATE COPPER(I) COMPOUNDS .3. THE SYNTHESIS OF (BETA-DIKETONATE) CU(1,5-COD) COMPOUNDS, THE SOLID-STATE STRUCTURE AND DISPROPORTIONATION OF HEXAFLUOROACETYLACETONATO (1,5-CYCLOOCTADIENE)COPPER(I), (HFAC)CU(1,5-COD) [J].

CHI, KM ;

SHIN, HK ;

HAMPDENSMITH, MJ ;

DUESLER, EN ;

KODAS, TT .

POLYHEDRON, 1991, 10 (19) :2293-2299

[4] ALKENE AND CARBON-MONOXIDE DERIVATIVES OF COPPER(I) AND SILVER(I) BETA-DIKETONATES [J].

DOYLE, G ;

ERIKSEN, KA ;

VANENGEN, D .

ORGANOMETALLICS, 1985, 4 (05) :830-835

[5] MOLECULAR DESIGN OF SINGLE-SOURCE PRECURSORS FOR 3-6 SEMICONDUCTOR-FILMS - CONTROL OF PHASE AND STOICHIOMETRY IN INXSEY FILMS DEPOSITED BY A SPRAY MOCVD PROCESS USING SINGLE-SOURCE REAGENTS [J].

GYSLING, HJ ;

WERNBERG, AA ;

BLANTON, TN .

CHEMISTRY OF MATERIALS, 1992, 4 (04) :900-905

[6]

Hampden-Smith M.J., 1994, CHEM METAL CVD

[7]

HESS DW, 1989, MICROELECTRONICS PRO

[8] CHEMICAL-VAPOR DEPOSITION OF COPPER FROM HEXAFLUOROACETYLACETONATO COPPER(I) VINYLTRIMETHYLSILANE - DEPOSITION RATES, MECHANISM, SELECTIVITY, MORPHOLOGY, AND RESISTIVITY AS A FUNCTION OF TEMPERATURE AND PRESSURE [J].

JAIN, A ;

CHI, KM ;

KODAS, TT ;

HAMPDENSMITH, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) :1434-1439

[9] CHEMICAL VAPOR-DEPOSITION OF COPPER VIA DISPROPORTIONATION OF HEXAFLUOROACETYLACETONATO(1,5-CYCLOOCTADIENE)COPPER(I), (HFAC)CU(1,5-COD) [J].

JAIN, A ;

CHI, KM ;

HAMPDENSMITH, MJ ;

KODAS, TT ;

FARR, JD ;

PAFFETT, MF .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (02) :261-264

[10] LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (LTMOCVD) OF DEVICE-QUALITY COPPER-FILMS FOR MICROELECTRONIC APPLICATIONS [J].

KALOYEROS, AE ;

FENG, A ;

GARHART, J ;

BROOKS, KC ;

GHOSH, SK ;

SAXENA, AN ;

LUEHRS, F .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) :271-276