A UNIFIED EXPLANATION FOR GATE CURRENT IN N-MOS DEVICES BASED ON HOT-ELECTRONS AND THE POOLE-FRENKEL EFFECT

被引：5

作者：

HARRELL, WR

FREY, J

机构：

[1] Microelectronics Research Laboratory, DOD, Columbia, MD 21045

[2] Department of Electrical Engineering, University of Maryland, College Park

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90174-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for gate oxide current in n-MOSFETS under bias conditions of low. V(G)/V(D) is presented. Experimental and theoretical evidence shows this current to he consistent with the Poole-Frenkel mechanism of election detrapping. We propose that this mechanism, in combination with hot-electron injection, is a source of hot-carrier damage in n-MOS devices.

引用

页码：281 / 284

页数：4

共 12 条

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