THE REALIZATION OF THE QUANTUM HALL STANDARD OF RESISTANCE AT THE BIPM

被引：11

作者：

WITT, TJ

ENDO, T

REYMANN, D

机构：

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1109/TIM.1987.6312676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：234 / 239

页数：6

共 9 条

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[2]

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[3]

KINOSHITA T, 1984, PRECISION MEASUREMEN, V2, P203

[4]

LECLERC G, 1986, 14E COMP ET NAT RES

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[6] A SIMPLE THERMOREGULATED ENCLOSURE FOR STANDARD CELLS [J].

REYMANN, D .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (12) :1142-1147

[7]

SMALL G, BIPM8613 COM CONS EL

[8]

VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494

[9] QUANTUM HALL-EFFECT IN SILICON METAL-OXIDE-SEMICONDUCTOR INVERSION-LAYERS - EXPERIMENTAL CONDITIONS FOR DETERMINATION OF H/E2 [J].

YOSHIHIRO, K ;

KINOSHITA, J ;

INAGAKI, K ;

YAMANOUCHI, C ;

ENDO, T ;

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KOYANAGI, M ;

YAGI, A ;

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PHYSICAL REVIEW B, 1986, 33 (10) :6874-6896

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