TUNNELING AND RESISTIVE DETERMINATIONS OF TRANSITION TEMPERATURE OF THIN LEAD FILMS

被引：11

作者：

FELDMANN, WL

ROWELL, JM

机构：

[1] Bell Telephone Laboratories, Incorporated, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.1657050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transition temperature Tc of a lead film has been determined from both the resistance along the film and from tunnel measurements of an aluminum-aluninum-oxide-lead junction. Tc by resistivity was 7.214°K and from tunneling 7.208°K. The agreement indicates that tunneling measurements may be used for accurate determinations of the transition temperature. © 1969 The American Institute of Physics.

引用

页码：312 / &