NOISE EQUIVALENT POWER CALCULATION - APPLICATION TO GA0.96AL0.04SB AVALANCHE PHOTODIODES

被引：4

作者：

LUQUET, H

GOUSKOV, L

PEROTIN, M

JEAN, A

MAGALLON, D

LAHBABI, M

BOUGNOT, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6541 / 6545

页数：5

共 12 条

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[5] LIQUID-PHASE-EPITAXIAL GROWTH OF GA0.96AL0.04SB - ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATIONS [J].

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[8] PHOTODETECTION AT 1.55-MICRON BY GA0.96AL0.04SB JUNCTIONS PRODUCED USING LIQUID-PHASE EPITAXY [J].

PEROTIN, M ;

GOUSKOV, L ;

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[9]

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[10]

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