CONVERSION LOSSES IN SCHOTTKY-BARRIER DIODE MIXERS IN THE SUBMILLIMETER REGION

被引：20

作者：

KELLY, WM

WRIXON, GT

机构：

[1] Department of Electrical Engineering, University College, Cork

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 07期

关键词：

D O I：

10.1109/TMTT.1979.1129698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conversion losses, both intrinsic and parasitic, are calculated for Schottky diode mixers in the submillimeter region, and optimum mixer performance is shown to depend strongly upon operating frequency and upon diode diameter. The implications for high-frequency diode fabrication are discussed, and a comparison is made of the expected performance of GaAs, Si, and InSb Schottky diodes at frequencies up to 5 THz. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：665 / 672

页数：8

共 29 条

[1]

BERNUES F, 1976, MICROWAVES MAR, P46

[2] NOVEL GAAS METALLIZED DIODE CONFIGURATION TO REDUCE SKIN-EFFECT CONTRIBUTIONS AT HIGH-FREQUENCIES [J].