EFFECT OF CHEMICAL-STATE OF DOPED SN ON THE ELECTRICAL-PROPERTIES OF SPUTTERED ITO FILMS

被引：8

作者：

KANAZAWA, J

HARANOH, T

MATSUMOTO, K

机构：

[1] Advanced Glass R and D Center, Asahi Glass Co, Ltd, Kanagawa-ku, Yokohama, 221, 1150, Hazawa-cho

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93991-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to define the role of doped Sn in highly-conducting sputtered indium tin oxide (ITO) films, the chemical state of Sn in the films and ITO targets has been investigated. The ITO films were prepared by dc magnetron sputtering from a sintered target comprised of a mixture of In2O3 and SnO2. The chemical state of Sn in In2O3 was determined by Mössbauer spectroscopy and chemical analysis, and was classified as being one of two groups: SnO2 grain segregated in In2O3, or Sn solved in In2O3 structure. ITO films a lower electrical resistivity exhibited higher solubility of Sn in In2O3. Lastly, the relation between the film properties and the chemical state of Sn in the targets is discussed. © 1990.

引用

页码：1463 / 1465

页数：3

共 5 条

[1] HYPERFINE CHARACTERIZATION OF TIN-DOPED INDIUM SESQUIOXIDE [J].