ENCAPSULATION OF CHEMICALLY SENSITIVE FIELD-EFFECT TRANSISTORS WITH PHOTOCURABLE EPOXY-RESINS

被引：20

作者：

DUMSCHAT, C

MULLER, H

RAUTSCHEK, H

TIMPE, HJ

HOFFMANN, W

PHAM, MT

HULLER, J

机构：

[1] ACAD SCI GDR,CENT INST NUCL RES,O-8051 ROSSENDOR,GERMANY

[2] TECH UNIV LEUNA MERSEBURG,DEPT PHOTOCHEM,MERSEBURG,GERMANY

[3] TECH UNIV LEUNA MERSEBURG,ANAL CHEM,MERSEBURG,GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1990年 / 2卷 / 04期

关键词：

D O I：

10.1016/0925-4005(90)80153-Q

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A method for the direct photolithographic structuring of epoxy resins has been elaborated and applied to the encapsulation of CHEMFETs. The experimental results promise the possibility of a high degree of automation in CHEMFET production. This process may also be used for the encapsulation of other sensors (e.g., pressure or gas sensors) which need a window in the encapsulation material between the sensor chip and the measuring medium.

引用

页码：271 / 276

页数：6

共 8 条

[1]

Crivello J. V., 1976, J POLYM SCI S, V56, P383

[2]

CRIVELLO JV, 1984, ADV POLYM SCI, V62, P3

[3]

DUMSCHAT C, 1988, Patent No. 273527

[4] POLYMERIZATION OF CYCLOHEXENE OXIDE WITH ALUMINUM COMPLEX-SILANOL CATALYST - 4. PHOTOPOLYMERIZATION WITH Ph3SiCOPh-Al COMPLEX-ALCOHOL CATALYST SYSTEM. [J].