A NEW CHROMELESS PHASE MASK FOR THE PHOTOLITHOGRAPHY

被引：4

作者：

BAUCH, L

BAUER, J

DREGER, H

LAUCHE, B

MEHLISS, G

ROTHE, S

机构：

[1] Institut für Halbleiterphysik Frankfurt(Oder), Walter-Korsing-Str. 2

[2] Zentrum für Mikroelektronik Dresden GmbH, O- 8080 Dresden, Grenzstr. 28

[3] Fotochemische Werke GmbH, O- 1170 Berlin

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

Chromeless Phase MAsk - Naphthoquinone Diazide Resist - Novolac Resists - Optical Image Transfer - ORWO Resist;

D O I：

10.1016/0167-9317(92)90018-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new simplified method for manufacturing of chromeless masks for the photolithography will be described. The generation of the required phase difference is made by silylation of an ORWO-resist using the swelling of the exposed resist. The contrast and the image transfer of this kind of transparent masks are calculated by simulation. First results of optical image transfer using this phase mask will be presented and discussed.

引用

页码：87 / 92

页数：6

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