UNUSUAL MAGNETORESISTIVE RESPONSE OF PROCESS-CONTROLLED AG/PERMALLOY BILAYER THIN-FILMS

被引:10
作者
KITADA, M
机构
关键词
D O I
10.1016/0304-8853(93)90006-N
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetoresistive response of insoluble Ag/Permalloy bilayer thin film elements made by an annealing process has been investigated. The electron-beam-deposited bilayer thin films are first annealed in an atmosphere containing oxygen, then in hydrogen. By this process, Ag and Permalloy species mix with each other. Although the magnetoresistive response curve shows large hysteresis, the magnetoresistivity reaches a maximum 5.6% from 2.8% of as-deposited film. This increase may be due to spin-dependent scattering of electrons.
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页码:L18 / L20
页数:3
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