HIGH-FREQUENCY TRANSISTOR FREQUENCY MULTIPLIERS AND POWER AMPLIFIERS

被引：5

作者：

JOHNSTON, RH

BOOTHROYD, AR

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1972.1050244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：81 / +

页数：1

共 11 条

[1]

Bailey R. L., 1970, IEEE Transactions on Electron Devices, Ved-17, P108, DOI 10.1109/T-ED.1970.16935

[2] MEASURING INTRINSIC-BASE-REGION CURRENTS OF A TRANSISTOR [J].

BOOTHROYD, AR ;

JOHNSTON, RH .

[3]

DUNCAN DM, 1964, P I RADIO ELECTRON E, V25, P149

[4]

FURLAN J, 1964, P IEEE, V52, P311, DOI 10.1109/PROC.1964.2887

HARRISON, RG .

[6]

HUNTER LP, 1962, HDB SEMICONDUCTOR EL, pCH12

[7] CHARGE-DRIVEN HF TRANSISTOR-TUNED POWER AMPLIFIER [J].

PEDEN, RD .

[8] TUNED POWER AMPLIFIERS [J].

SCOTT, TM .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1964, CT11 (03) :385-&

[9] AN APPROACH TO DESIGN OF TRANSISTOR TUNED POWER AMPLIFIERS [J].

SLATTER, JAG .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1965, CT12 (02) :206-&

[10]

THORNTON RD, 1966, HDB BASIC TRANSISTOR, V7, P29