A W-BAND MEDIUM POWER MULTISTACK QUANTUM BARRIER VARACTOR FREQUENCY TRIPLER

被引：17

作者：

RAHAL, A

BOSISIO, RG

ROGERS, C

OVEY, J

SAWAN, M

MISSOUS, M

机构：

[1] Centre de recherche POLY-GRAMES (Groupe de Recherches Avancées en Microondes et en Electronique Spatiale), Ecole Polytechnique de Montreal

[2] Philips Microwave, Stockport, Cheshire

[3] Electrical Engineering Department, UMIST

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/75.473540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional multi-stack quantum barrier varactor (MSQBV) diodes on GaAs suffer from leaky barriers and low breakdown voltage, which limits their performance in high-power applications. Using a lattice-matched InGaAs/InAlAs/InGaAs barriers on InP we have grown a new 10-stack device. Measurement results are presented that demonstrate low series resistance, large capacitance modulation, and significantly higher breakdown voltage than previously reported devices. The power capability of this new device has been investigated by simulations and measurements. An experiment in a waveguide tripler circuit shows a 19.6 dBm output power at 93 GHz. This is the highest output power reported from a single QBV device at W-band.

引用

页码：368 / 370

页数：3

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