IMPROVED P-N-JUNCTIONS IN GE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

p/n junctions in Ge-doped GaAs consisting of p-type layers with extremely smooth surfaces and low compensation n-type layers were fabricated by molecular beam epitaxy (MBE). During growth the site occupancy of Ge was controlled by varying the substrate temperature from T s <500°C (n-type layers) to T s >600°C (p-type layers) at a constant As4 to Ga flux ratio of 2. This yields stable growth conditions for the generation of Ga and As vacancies, respectively. © 1979 Springer-Verlag.