PROCESSES AND PARAMETERS FOR DIAMOND DEPOSITION

被引：11

作者：

GICQUEL, A ^{[1
]}

HEAU, C ^{[1
]}

FABRE, D ^{[1
]}

PERRIERE, J ^{[1
]}

机构：

[1] UNIV PARIS 13, CNRS, INGN MAT & HAUTES PRESSIONS LAB, F-93430 VILLETANEUSE, FRANCE

来源：

关键词：

D O I：

10.1016/0925-9635(92)90100-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The determination of the macroscopic key parameters for the deposition of thin films of diamond using chemical vapour deposition techniques constitutes the main goal of our research. The results presented here concern the specific coupled roles of the substrate temperature together with the etching agent action (here the oxygen content species) on the quality and the morphology of the deposit and on the nucleation density. © 1992.

引用

页码：776 / 781

页数：6