HYDROGEN CONCENTRATION GAAS DETECTORS

被引：4

作者：

BEREZKIN, VA

GRABCHAK, VP

INKIN, VN

RYCHKOV, GS

机构：

[1] Kurchatov Institute, Moscow

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 03期

关键词：

D O I：

10.1016/0924-4247(91)85006-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of detectors sensitive to the hydrogen concentration in gas mixtures based on standard epitaxial GaAs structures, optical fibre and catalytic metallic Pd has been studied. Such detectors can be used at high temperatures in corrosive media.

引用

页码：191 / 195

页数：5

共 4 条

[1] HYDROGEN SENSITIVITY OF PD/SIO2/SI STRUCTURE - A CORRELATION WITH THE HYDROGEN-INDUCED MODIFICATIONS ON OPTICAL AND TRANSPORT-PROPERTIES OF ALPHA-PHASE PD FILMS [J].

FORTUNATO, G ;

BEARZOTTI, A ;

CALIENDO, C ;

DAMICO, A .

SENSORS AND ACTUATORS, 1989, 16 (1-2) :43-54

[2]

GAMMEL JC, 1978, P IEDM, P120

[3] PHYSICS WITH CATALYTIC METAL GATE CHEMICAL SENSORS [J].

LUNDSTROM, I ;

ARMGARTH, M ;

PETERSSON, LG .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1989, 15 (03) :201-278

[4]

MARAKAMI K, 1988, SENSOR ACTUATOR, V13, P315

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