MAGNETOPHONON EFFECT IN GAAS AND INP TO HIGH-PRESSURES

被引：32

作者：

PITT, GD

LEES, J

HOULT, RA

STRADLING, RA

机构：

[1] STAND TELECOMMUN LABS LTD, LONDON RD, HARLOW, ESSEX, ENGLAND

[2] OXFORD UNIV, CLARENDON LAB, OXFORD, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 22期

关键词：

D O I：

10.1088/0022-3719/6/22/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3282 / 3294

页数：13

共 28 条

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[22]

POLLAK FH, 1966, P INT C PHYS SEMICON, P20

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ALSUP, DL ;

MUTHUKRISHNAN, R .

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[25] MAGNETOPHONON EFFECT IN 3-V SEMICONDUCTING COMPOUNDS [J].

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WOOD, RA .

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[26] LOW-TEMPERATURE HALL MEASUREMENTS ON X1C ELECTRONS IN GAAS [J].

VYAS, MKR ;

PITT, GD ;

HOULT, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (02) :285-299

[27] MAGNETOPHONON EFFECT OBSERVED IN HALL COEFFICIENT [J].

WOOD, RA ;

STRADLING, RA ;

MOLODYAN, IP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (08) :L154-+

[28]

ZALLEN RA, 1967, HP12 HARV U TECHN RE

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