SWITCHING NANO-DEVICE BASED ON RABI OSCILLATIONS

被引：13

作者：

MARTIN, T

BERMAN, G

机构：

[1] LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545

[2] LOS ALAMOS NATL LAB,DIV THEORET,LOS ALAMOS,NM 87545

[3] LV KIRENSKII INST PHYS,KRASNOYARSK 660036,RUSSIA

来源：

PHYSICS LETTERS A | 1994年 / 196卷 / 1-2期

关键词：

D O I：

10.1016/0375-9601(94)91045-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe a switching device based on Rabi oscillations. The device consists of a well region separated from a free region by a potential barrier. The potential landscape is adjusted so that one bound state and one quasi level are present. By applying a microwave field with a driving frequency close to the separation between the two levels, a particle initially in the ground state can be activated to the quasi-level, and subsequently tunnel to the free region. The probability for tunneling in the free region exhibits a plateau structure, as the wave function is emitted by bursts after each Rabi oscillation. The leakage current can then be controlled by varying the amplitude of the external field, the barrier height/width, and the frequency mismatch.

引用

页码：65 / 69

页数：5

共 5 条

[1]

BAYM G, LECTURES QUANTUM MEC

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