LINEAR-POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN OPEN INGAAS/INP QUANTUM-WELL WIRES

被引：7

作者：

GIPPIUS, NA

TIKHODEEV, SG

RUBIO, J

CALLEJA, JM

ILS, P

FORCHEL, A

KULAKOVSKII, VD

机构：

[1] UNIV AUTONOMA MADRID,E-28049 MADRID,SPAIN

[2] UNIV WURZBURG,D-97074 WURZBURG,GERMANY

[3] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 188卷 / 01期

关键词：

D O I：

10.1002/pssb.2221880124

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence and Raman scattering intensities of InGaAs/InP quantum well wires with wire widths L(x) between 10 nm and 1 mu m are strongly polarized parallel to the wire axis. This effect is mainly due to the spatial redistribution of the electric component of the electromagnetic field in the vicinity of the quantum wire.

引用

页码：269 / 273

页数：5

共 5 条

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GRAMBOW, P
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