FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE

被引：52

作者：

GREENAWAY, DL

机构：

来源：

PHYSICAL REVIEW LETTERS | 1962年 / 9卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.9.97

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：97 / &

共 10 条

[1] SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE [J].

AVEN, M ;

MARPLE, DTF ;

SEGALL, B .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2261-&

[2] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J].

BRUST, D ;

BASSANI, F ;

PHILLIPS, JL .

PHYSICAL REVIEW LETTERS, 1962, 9 (03) :94-&

[3] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J].

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2151-&

[4] REFLECTIVITY OF GRAY TIN SINGLE CRYSTALS IN FUNDAMENTAL ABSORPTION REGION [J].

CARDONA, M ;

GREENAWAY, D .

PHYSICAL REVIEW, 1962, 125 (04) :1291-&

[5] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].

EHRENREICH, H ;

PHILLIPS, JC ;

PHILIPP, HR .

PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&

[6]

GREENAWAY D, TO BE PUBLISHED

[7] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :82-99

[8] BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS [J].

PAUL, W .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2082-&

[9] CRITICAL POINTS AND LATTICE VIBRATION SPECTRA [J].

PHILLIPS, JC .

PHYSICAL REVIEW, 1956, 104 (05) :1263-1277

[10]

TAUC J, 1961, 1960 P INT C SEM PHY, P375

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