SWITCHING PROPERTIES OF THIN SELENIUM FILMS UNDER PULSED BIAS

被引：9

作者：

JONES, G

COLLINS, RA

机构：

[1] UNIV LANCASTER,DEPT PHYS,LANCASTER LA1 4YB,ENGLAND

[2] PILKINGTON BROTHERS LTD,LATHOM LABS,LANCASTER L40 5UF,ENGLAND

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90093-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L15 / L18

页数：4

共 8 条

[1] MEMORY SWITCHING AND CRYSTALLIZATION IN SELENIUM [J].

ARMITAGE, D ;

CHAMPNES.CH .

CANADIAN JOURNAL OF PHYSICS, 1971, 49 (21) :2718-&

[2]

Armitage D., 1972, J. Non-Cryst. Solids, V7, P410

[3]

FRITZSCHE H, 1973, ELECTRONIC STRUCTURA, P55

[4] POLARIZED MEMORY SWITCHING IN AMORPHOUS SE FILM [J].

HAYASHI, T ;

ONO, Y ;

FUKAYA, M ;

KAN, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1163-1164

[5]

KARSUNSKII MI, 1975, SOV PHYS DOKL, V20, P127

[6] POLARIZED MEMORY EFFECT OBSERVED ON SE-SNO2 SYSTEM [J].

MATSUSHITA, T ;

YAMAGAMI, T ;

OKUDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) :1657-+

[7] SWITCHING AND POLARITY-DEPENDENT MEMORY EFFECTS IN SE-SNO2 AND SE-IN2O3 THIN-FILM DEVICES [J].

PURKISS, S ;

COLLINS, RA ;

TEMPLE, BK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2301-2303

[8]

SATSUSHITA T, 1972, SOLID STATE COMMUN, V11, P1413

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