MEMORY DIAGRAM OF SINGLE-MODE SEMICONDUCTOR-LASERS

被引:22
作者
COLET, P [1 ]
MIRASSO, CR [1 ]
MIGUEL, MS [1 ]
机构
[1] UNIV ILLES BALEARS,DEPT FIS,E-07071 PALMA DE MALLORCA,SPAIN
关键词
D O I
10.1109/3.234414
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A memory diagram, or regions where pattern effects appear at the output of the laser, in the bias current versus modulation period plane is obtained, both by numerical simulation of the rate equations and by using an analytical approach. A simple method, based on the superposition of the turn-on time probability distribution for the periodic sequence ''... 1111...'' of input bits and the turn-on time probability distribution obtained for repetitive gain switching, is used to describe the response of the laser to a pseudorandom word modulation of the injection current.
引用
收藏
页码:1624 / 1630
页数:7
相关论文
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