BASI2 AND THIN-FILM ALKALINE-EARTH SILICIDES ON SILICON

被引:112
作者
MCKEE, RA
WALKER, FJ
CONNER, JR
RAJ, R
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2] UNIV TENNESSEE,DEPT MAT SCI & ENGN,KNOXVILLE,TN 37996
关键词
D O I
10.1063/1.110297
中图分类号
O59 [应用物理学];
学科分类号
摘要
The epitaxial structural development and surface reactions of the alkaline earth metals with silicon have been studied as a function of surface coverage. The barium reaction has been characterized in detail from submonolayer structures to the thick film orthorhombic phase, BaSi2. From 0 to 1 monolayer a series of ordered surface structures develops that suggests a cubic Ba-Si compound. We have also shown that strontium, calcium, and magnesium develop these highly ordered submonolayer silicides. These submonolayer structures are the templates for the heteroepitaxial transition to alkaline earth containing oxides on silicon.
引用
收藏
页码:2818 / 2820
页数:3
相关论文
共 13 条
[1]  
AKIYAMA M, UNPUB APR MAT RES SO
[2]  
BEAN JC, 1988, SILICON MOL BEAM EPI, V2, P65
[3]   SOLID-SOLUTIONS M1-XSRXSI2 (M=CA,EU,BA) AND BASI2-YGEY WITH SRSI2-TYPE STRUCTURE [J].
EVERS, J ;
OEHLINGER, G ;
WEISS, A .
JOURNAL OF THE LESS-COMMON METALS, 1980, 69 (02) :399-402
[4]  
EVERS J, 1978, J LESS-COMMON MET, V58, P58
[5]   HIGH CRITICAL CURRENTS IN STRAINED EPITAXIAL YBA2CU3O7-DELTA ON SI [J].
FORK, DK ;
FENNER, DB ;
BARTON, RW ;
PHILLIPS, JM ;
CONNELL, GAN ;
BOYCE, JB ;
GEBALLE, TH .
APPLIED PHYSICS LETTERS, 1990, 57 (11) :1161-1163
[6]   DISILICIDES OF ALKALI-EARTH METALS [J].
JANZON, KH ;
SCHAFER, H ;
WEISS, A .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1970, 372 (01) :87-&
[7]   ON THE REACTIONS OF QUENCHED BAYCUO POWDERS WITH VARIOUS MATERIALS [J].
KOMATSU, T ;
TANAKA, O ;
MATUSITA, K ;
TAKATA, M ;
YAMASHITA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06) :L1025-L1028
[8]   GROWTH OF YBA2CU3O7-X THIN-FILMS ON SI WITH A COSI2 BUFFER LAYER [J].
LUO, L ;
MUENCHAUSEN, RE ;
MAGGIORE, CJ ;
JIMENEZ, JR ;
SCHOWALTER, LJ .
APPLIED PHYSICS LETTERS, 1991, 58 (04) :419-421
[9]   MOLECULAR-BEAM EPITAXY GROWTH OF EPITAXIAL BARIUM SILICIDE, BARIUM OXIDE, AND BARIUM-TITANATE ON SILICON [J].
MCKEE, RA ;
WALKER, FJ ;
CONNER, JR ;
SPECHT, ED ;
ZELMON, DE .
APPLIED PHYSICS LETTERS, 1991, 59 (07) :782-784
[10]  
PHILLIPS JM, 1988, SILICON MOL BEAM EPI, V1, P135